SIS126DN-T1-GE3

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Manufacturer Part	SIS126DN-T1-GE3
Manufacturer	Vishay / Siliconix
Description	MOSFET N-CH 80V 12A/45.1A PPAK
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	SIS126DN-T1-GE3 PDF

Availability

InStock	4,215
UnitPrice	$ 1.00000

SIS126DN-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SIS126DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Rds On (Max) @ Id, Vgs:	10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1402 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 52W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8
Package / Case:	PowerPAK® 1212-8

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